Products
TEG Products
Material Au Solder Cu Ni Electroless
Ni/Au		 Function
- +SnAg +Ni
+SnAg		 +Ni
+Au		 - +SnAg
Form PLATE STUD PLATE MOUNT PLATE PLATE PLATE PLATE PLATE PLATE PLATE -
Image -
MB50 ● ● ● - ● ● ● ● ● ● - Daisy
MB60 ● ● ● - ● ● ● ● ● ● - Daisy
MB80 ● ● ● - ● ● ● ● ● ● - Daisy
MB130 ● ● ● - ● ● ● ● ● ● ● Daisy
CC40 ● - ● - ● ● ● ● ● ● - Daisy
IP40 - - - - ● ● ● ● ● ● ● Daisy/Vernier
Bump Short/
Breakdown Voltage
CC80 ● ● ● - ● ● ● ● ● ● - Daisy
IP80 - - - - ● ● ● ● ● ● ● Daisy
CC80TSV - - - - - ● ● - - - ●/◎ TSV
CC80MarkⅡ ● ● ● - ● ● ● ● ● ● - Daisy/Migration
CC80MarkⅡWM - - - - ● ● - - - - ◎ Daisy/Migration
WM40-0101 - - - - ◎ ● - - - - - -
CC80MarkⅢ - - - - ● ● - - - - ◎ Daisy/Migration
WM40-0102 - - - - - ● - - - - - Daisy
CC80MarkⅣ - - - - ● ● - - - - - Daisy
IP80MarkⅣ - - - - - - - - - - ● Daisy
FC150LC - - - - ● ● - - - - - Daisy
FC150(Si) - - ● ● ● ● ● ● ● - ● Daisy
FC150(Glass) - - ● ● ● ● ● ● ● ● ● -
FC150SC - - ● ● ● ● ● ● ● ● ● Daisy
FC200(Si) - - ● ● ● ● ● ● ● ● ● Daisy
FC200(Glass) - - ● ● ● ● ● ● ● ● ● -
FC200SC - - ● ● ● ● ● ● ● ● ● Daisy
FBW - - - - ● ● ● - - - - -
WLP - - - ● - - - - - - - Daisy
ME - - - - - - - - - - - Migration
STAC ● ● ● - ● ● ● ● ● ● - Stress/
Thermal/
HeatGeneration
STAC150FA - - - - ● ● ● ● ● ● - Stress/
Thermal/
HeatGeneration
STAC300FA - - - - ● ● ● ● ● ● - Stress/
Thermal/
HeatGeneration
HPW ● ● ● - ● ● ● ● ● ● - Thermal/
Heat Generation
HPW150FA - - - - ● ● ● ● ● ● - Thermal/
Heat Generation
HPWTSV - - - - - ● - - - - ◎ TSV
LCD30 ● - ● - ● ● ● ● ● ● ● Daisy/
Breakdown Voltage
PWB - - - - - - - - - - - Bondability
　● Top Side　/　◎Bottom Side

WALTS-TEG MB50-0101JY
Specification Type-A Type-B Type-C (Glass)
Wafer Size φ 8 inch φ 8 inch φ 8 inch
Wafer Thickness 725±25µm 725±25µm 700±70µm
Chip Size 7.3mm■ 7.3mm■ 7.3mm■
Pad Pitch 50µm 50µm 50µm
Function Daisy Chian Daisy Chian －
Bump Size － Au: 30µm■
Cu: 30µm■
Cu: φ25µm●		 Cu: 30µm■
Cu: φ25µm●
Bump Height － (Cu30µm+SnAg15µm) (Cu30µm+SnAg15µm)
Number of Pad 544 pads/chip 544 pads/chip －
Number of Chip 478 chips/wafer 478 chips/wafer 478 chips/wafer
Polyimide (Option) ○ ○ ○
 Evaluation KIT WALTS-KIT MB50-0102JY_NCR【Standard】
WALTS-KIT MB50-0104JY_CR【Standard】
WALTS-KIT MB50-0105JY_CR【Standard】
WALTS-KIT MB50-0102JY_NCR【MAP】
WALTS-KIT MB50-0103JY_CR【MAP】
WALTS-KIT MB50-0104JY_CR【MAP】

WALTS-TEG MB60-0101JY

Specification MB60-0101JY
Wafer Size φ8inch
Wafer Thickness 725±25µm
Chip Size 7.3mm■
Pad Pitch 60µm
Function Daisy Chain
Bump Size -
Bump Height -
Number of Pad 448 pads/chip
Number of Chip 478 chips/wafer
Polymide(option) ○
Evaluation KIT -

WALTS-TEG MB80-STG0101JY

Specification Type-A Type-B
Wafer Size φ8inch φ8inch
Wafer Thickness 725±25µm 725±25µm
Chip Size 7.3mm■ 7.3mm■
Pad Pitch 80µm Staggred 80µm Staggred
Function Daisy Chain Daisy Chain
Bump Size - 38µm■
Bump Height (Wire Bonding) (Cu30µm+SnAg15µm)
Number of Pad 648 pads/chip
82 pads × 4(Outer Line)
80 pads × 4(Inner Line)		 648 pads/chip
82 pads × 4(Outer Line)
80 pads × 4(Inner Line)
Number of Chip 478 chips/wafer 478 chips/wafer
Polyimide(Option) ○ ○

WALTS-TEG AS8R
Specification AS8R
Wafer Size φ8inch
Wafer Thickness 725±25µm
Chip Size 3.5mm■
Pad Pitch 120µm
Function Daisy Chain
Bump Size -
Bump Height -
Number of Pad 96 pads/chip(Outer Line)
88 pads/chip(Inner Line)
Number of Chip 2266 chip/wafer
Polyimide(Option) ○
Evaluation KIT -

WALTS-TEG MB130-STG0101JY
     MB130A-STG0101JY

Specification MB130 MB130A
TYPE-A TYPE-B
Wafer Size φ6inch φ6inch φ8inch
Wafer Thickness 550±25µm 550±25µm 725±25µm
Chip Size 2.13mm■ 2.13mm■ 2.13mm■
Pad Pitch 130µm 130µm 130µm
Function Daisy Chain Daisy Chain Daisy Chain
Bump Size - 70µm■ -
Bump Height (Wire Bonding)
(Au Stud Bump)		 (Cu30µm+SnAg15µm) (Wire Bonding)
(Au Stud Bump)
Number of Pad 108 pads/chip
15 pads × 4
(Outer Line)
12 pads × 4
(Inner Line)		 108 pads/chip
15 pads × 4
(Outer Line)
12 pads × 4
(Inner Line)		 108 pads/chip
15 pads × 4
(Outer Line)
12 pads × 4
(Inner Line)
Number of Chip 3300 chips/wafer 3300 chips/wafer 6060 chips/wafer
Polyimide(Option) ○ ○ ○
Evaluation KIT - - -

WALTS-TEG MB6020-0102JY

Specification MB6020-0102JY
Wafer Size φ8inch
Wafer Thickness 725±25µm
Chip Size 3.0mm■
Pad Pitch 60/55/50/45/40/35/30/25/20µm
Function Daisy Chain
Bump Size -
Bump Height -
Number of Pad (40×4) (40×4)(38×4)
(38×4)(36×4)(34×4)
(30×4)(26×4)(18×4)
Number of Chip 3016 chips/wafer
Polyimide(Option) -
Evaluation KIT -

WALTS-TEG CC40-0101JY

Specification CC40-0101JY
Wafer Size φ8inch
Wafer Thickness 725±25µm
Chip Size 7.3 mm■
Pad Pitch Model I:40µm Staggered + 40um Full Area　
Model II:40µm Staggered　
Function Daisy Chain
Bump Size Model I:φ22µm
Model II:φ22µm
Bump Height (Cu15µm+SnAg10µm)
Number of Pad Model I:29576 pads/chip
Model II:1352 pads/chip
Number of Chip 478 chips/wafer
Polyimide(Option) -
Evaluation KIT WALTS-TEG IP40-0101JY (Silicon Interposer)
WALTS-TEG IP40A-0101JY (Silicon Interposer)

WALTS-TEG IP40-0101JY

Specification IP40-0101JY (Model I / Model II)
Wafer Size φ 8 inch
Wafer Thickness 725±25µm
Chip Size 10.0 mm■
Pad Pitch (1) 40µm pitch Full area + Staggered (Model I)
40µm pitch Staggered (Model II)
(2) 250µm pitch Periphera (Outer Pad)　　　
Function Daisy Chain
Bump Short Check
Vernier
Breakdown Voltage Check between the Bumps
Bump Size -
Bump Height -
Number of Pad Model I :(1) 29576 pads/chip　
(2) 124 pads/chip (Outer Pad)
Model II :(1) 1352 pads/chip　
(2) 124 pads/chip (Outer Pad)
Number of Chip 228 chips/wafer
Polyimide(Option) -
Evaluation KIT -

WALTS-TEG IP40A-0101JY
Specification IP40A-0101JY (Model I)
Wafer Size φ12inch
Wafer Thickness 775±25µm
Chip Size 10.0mm■
Pad Pitch (1) 40µm pitch Full area + Staggered (Model I)
(2) 250µm pitch Peripheral (Outer Pad)
Function Daisy Chain
Bump Short Check
Vernier
Breakdown Voltage Check between the Bumps
Bump Size -
Bump Height -
Number of Pad Model I: (1) 29576 pads/chip
(2) 124 pads/chip (Outer Pad)
Number of Chip 616 chips/wafer
Polyimide (Option) -
Evaluation KIT -

WALTS-TEG CC80-0101JY  

Specification CC80-0101JY
Wafer Size φ8inch
Wafer Thickness 725±25µm
Chip Size 7.3mm■
Pad Pitch 80µm Staggered (Peripheral)
300µm Full Area (Center Core)
Function Daisy Chain
Bump Size Model I: 38µm■ or φ42µm●
Model II: 38µm■
Model III:38µm■
Bump Height (Cu30µm+SnAg15µm)
Number of Pad Model I:1048 pads/chip
Model II: 904pads/chip
Model III:728pads/chip
Model IV: 648pads/chip
Number of Chip 478 chips/wafer
Polyimide (Option) ○
Evaluation KIT WALTS-TEG IP80-STG0101JY(Silicon Interposer)
WALTS-KIT CC80-0104JY

WALTS-TEG IP80-0101JY  

Specification IP80-0101JY
Wafer Size φ8inch
Wafer Thickness 725±25µm
Chip Size 10.0mm■
Pad Pitch (1) 80µm Staggered (Inner Pad)
(2) 300µm Full Area (Center Core)
(3) 250µm Peripheral(Outer Pad)
Function Daisy Chain
Bump Size -
Bump Height -
Number of Pad (1)648 pads/chip
(2)400 pads/chip
(3)124 pad /chip
Number of Chip 228 chips/wafer
Polyimide (Option) ○
Evaluation KIT -

WALTS-TEG CC80TSV-0101JY  

Specification CC80TSV-1 CC80TSV-2
Wafer Size φ 8 inch φ 8 inch
Chip Thickness 100µm 100µm
Chip Size 7.3 mm■ 7.3 mm■
Pad Pitch 80µm Staggered (Periphera)
300µm Full Area (Center Core)		 80μm Staggered (Periphera)
300μm Full Area (Center Core)
TSV Hole Diameter φ40µm● φ40µm●
Top
Side		 Electrode Electroless Ni/Au Cu+SnAg
 Bump Size φ48µm●
(Option: φ42µm●)		 38µm■ 
(Option: φ42µm●)
 Bump Height (8～12µm) (Cu20µm+SnAg15µm)
Bottom
Side		 Electrode Electroless Ni/Au Electroless Ni/Au
 Bump Size φ48µm●
(Option: φ42µm●)		 φ48µm●
(Option: φ42µm●)
 Bump Height (8～12µm) (8～12µm)
Number of Chip 478 chips/wafer 478 chips/wafer
Evaluation KIT WALTS-TEG CC80-0101JY
WALTS-TEG IP80-0101JY (Silicon Interposer)

WALTS-TEG CC80MarKII-0101JY

Specification CC80MarkII-0101JY【STD】
Wafer Size φ8inch
Chip Thickness 725±25µm
Chip Size 12.0mm■
Pad Pitch 80µm Staggered(Peripheral)
200µm Full Area(Center Core)
Function Daisy Chain & Migration
Bump Size φ31µm●
Bump Height (Cu30µm+SnAg15µm)
Number of Pad 1660 pads/chip (Peripheral)
2916 pads/chip (Center Core)
Number of Chip 177 chips/wafer
Polyimide (Option) -
Evaluation KIT WALTS-KIT CC80MarkII-0201JY

WALTS-TEG
CC80MarkII WM-0101JY

Specification CC80MarkII WM-0101JY

※Base Wafer：WALTS TEG CC80MarkII-0101JY
Wafer Size 8inch
Wafer Thickness 100µm
Chip Size 10 mm × 8 mm
Function Daisy Chain & Migration (Top Side)
Top
Side		 Electrode Cu Pillar
 Bump Size φ31µm●
 Bump Height (Cu 20µm + SnAg 15µm)
Bottom
Side		 Electrode Cu Post
 Bump Size φ26µm●
Bump Pitch (1) 40µm (2) 300µm 
 Number of Bump (1) 1200 bumps (2) 714 bumps 
 Bump Height (Cu 6µm)
Number of Chip 177 chips/wafer
Evaluation KIT WALTS-KIT CC80MarkII-0201JY
WALTS-TEG WM40-0101JY

WALTS-TEG WM40-0101JY  

Specification WM40-0101JY
Wafer Size 8inch
Wafer Thickness 50µm
Chip Size 10 mm × 8 mm
Function -
Top
Side		 Electrode Cu Pillar
 Bump Size Φ20µm●
 Bump Height (Cu 15µm + SnAg 8µm)
Bump Pitch (1) 40µm (2) 300µm 
 Number of Bump (1) 1200 bumps (2) 714 bumps 
Bottom
Side		 Electrode Cu Post
 Bump Size Φ26µm●
Bump Pitch (1) 40µm (2) 300µm 
 Number of Bump (1) 1200 bumps (2) 714 bumps 
 Bump Height (Cu 6µm)
Number of Chip 312 chips/wafer
Evaluation KIT WALTS-KIT CC80MarkII-0201JY

WALTS-TEG CC80MarkIII0101JY  

Specification CC80MarkIII-0101JY
Wafer Size 6inch
Wafer Thickness 100µm or 350µm
Chip Size 12.0 mm × 12.0 mm
Function Daisy Chain ＆ Migration(Top Side)
Daisy Chain (Bottom Side)
Top
Side		 Electrode Cu Pillar
 Bump Size Φ31µm●
 Pad Pitch (1) 80µm Three Rows Staggered (Peripheral)
(2)200µm Full Area (Center Core)
Number of Bump/Pad (1) 1660bumps/1660pads (Peripheral)
(2)2916bumps/2916pads (Center Core)
Bottom
Side		 Electrode Electroless Ni/Au
 Bump Size Φ20µm●
Bump Pitch (1) 40µm (Center Core)
(2) 300µm (Peripheral)
(3) 550µm (Outer Pad)
 Number of Bump (1) 120 pads (Center Core)
(2) 714 pads (Peripheral)
(3) 40 pads (Outer Pad)
Number of Chip 89 chips/wafer
Evaluation KIT WALTS-KIT CC80MarkII-0201JY
WALTS-TEG WM40-0102JY

WALTS-TEG WM40-0102JY  

Specification WM40-0102JY
Wafer Size 8inch
Wafer Thickness 725±25µm
Chip Size 10 mm × 8 mm
Function Daisy Chain
Electrode Cu Pillar
Bump Size φ20µm●
Bump Height (Cu15µm + SnAg8µm)
Bump Pitch (1) 40µm
(2)300µm
Number of Bump (1) 1200 bumps
(2) 714 bumps
Number of Chip 312 chips/wafer
Evaluation KIT WALTS-KIT CC80MarkII-0201JY

WALTS-TEG CC80MarkIV-0101JY  

Specification CC80MarkIV-0101JY
Wafer Size 8inch
 Chip Chip A Chip B
Chip Size 6.0 mm × 10.0 mm 4.0 mm × 10.0 mm
 Pad Pitch
(1) 40µm[10Row]×50µm[192Row] (Peripheral)
(2) 80µm staggered[3Row](Center core)
(3) 150µm Min. Lattice
Function Daisy Chain
Electrode Cu Pillar
Bump Size φ25µm●
Number of Bump/Pad (1)1920bumps/1920pads
(2) 687 bumps/ 687 pads
(3) 1743bumps/1743pads		 (1)1920bumps/1920pads
(2) 531 bumps/ 531 pads
(3) 978 bumps/ 978 pads
Number of Chip Chip A：228chips/wafer
Chip B：228chips/wafer
Evaluation KIT WALTS-TEG IP80MarkIV-0101JY (Sillicon Interposer)

WALTS-TEG IP80MarkIV-0101JY  

Specification IP80MarkIV-0101JY
Wafer Size 8inch
Wafer Thickness 725±25µm
Chip Size 15.0 mm × 15.0 mm
Pad Pitch (1) 40µm[10Row]×50µm[192Row]×2 (Peripheral)
(2) 80µm staggered[3Row](Center core)
(3) 150µm Min. Lattice
(4) 300µm (Staggered)
Function Daisy Chain
Electrode Electroless Ni/Au plating
Bump Size (1)27µm●
(2)27µm●
(3)27µm●
(4)141µm■
Number of Bump/Pad (1)3840bumps/3840pads
(2)1172bumps/1172pads
(3)2721bumps/2721pads
(4)328bumps/328pads
Number of Chip 97 chips/wafer
Evaluation KIT -

WALTS-TEG FC150LC-0101JY

Specification FC150LC-0101JY
Wafer Size φ12 inch
Wafer Thickness 775±25µm
Chip Size 25.0mm■
Pad Pitch 150µm (Area)
Function Daisy Chian
Bump Size φ75µm●
Bump Height Cu pillar (Cu30µm+SnAg15µm)
Number of Pad 25921 pads/chip (161×161)
Number of Chip 89 chips/wafer
Polyimide (Option) ○
Evaluation KIT WALTS-KIT FC150LC-0302JY

WALTS-TEG FC150JY
【Si-Type】

Specification Type-A Type-B
Wafer Size φ 8 inch φ 8 inch
Wafer Thickness 725±25µm 725±25µm
Chip Size 10.0mm■ 10.0mm■
Pad Pitch 150µm (Area) 150µm (Area)
Function Daisy Chian Daisy Chian
Bump Size φ85µm● φ75µm●
Bump Height Ball Mounted Solder Bump (80µm) Cu Pillar (Cu30µm+SnAg15µm)
Number of Pad 3721 pads/chip (61×61) 3721 pads/chip (61×61)
Number of Chip 208 chips/wafer 208 chips/wafer
Polyimide (Option) ○ ○
Evaluation KIT WALTS-KIT 01A150P-10-2
WALTS-KIT FC150-0103JY
2×2
WALTS-KIT FC150-0104JY
2×2
WALTS-KIT FC150R-0102JY 2×2		 WALTS-KIT 01A150P-10-2
WALTS-KIT FC150-0103JY
2×2
WALTS-KIT FC150-0104JY
2×2
WALTS-KIT FC150R-0102JY 2×2

WALTS-TEG FC150JY
【Glass-Type】

Specification Type-A Type-B
Wafer Size φ8 inch φ8 inch
Wafer Thickness 700±70µm 700±70µm
Chip Size 10.0mm■ 10.0mm■
Pad Pitch 150µm (Area) 150µm (Area)
Function - -
Bump Size φ85µm● φ75µm●
Bump Height Ball Mounted Solder Bump (80µm) Cu Pillar (Cu30µm+SnAg15µm)
Number of Pad 3721 pads/chip (61×61) 3721 pads/chip (61×61)
Number of Chip 228 chips/wafer 228 chips/wafer
Polyimide (Option) 208 chips/wafer 208 chips/wafer
Evaluation KIT WALTS-KIT 01A150P-10-2
WALTS-KIT FC150-0103JY 2×2
WALTS-KIT FC150-0104JY 2×2
WALTS-KIT FC150R-0102JY 2×2		 WALTS-KIT 01A150P-10-2
WALTS-KIT FC150-0103JY 2×2
WALTS-KIT FC150-0104JY 2×2
WALTS-KIT FC150R-0102JY 2×2

WALTS-TEG FC150SCJY

Specification Type-A Type-B
Wafer Size φ8 inch φ8 inch
Wafer Thickness 725±25µm 725±25µm
Chip Size 5.02mm■ 5.02mm■
Pad Pitch 150µm (Area) 150µm (Area)
Function Daisy Chian Daisy Chian
Bump Size φ85µm● φ75µm●
Bump Height Ball Mounted Solder Bump (80µm) Cu Pillar (Cu30µm+SnAg15µm)
Number of Pad 784 pads/chip (28×28) 784 pads/chip (28×28)
Number of Chip 832 chips/wafer 832 chips/wafer
Polyimide (Option) ○ ○
Evaluation KIT - -

WALTS-TEG FC200JY
【Si-Type】

Specification Type-A Type-B
Wafer Size φ8 inch φ8 inch
Wafer Thickness 725±25µm 725±25µm
Chip Size 10.0mm■ 10.0mm■
Pad Pitch 200µm (Area) 200µm (Area)
Function Daisy Chian Daisy Chian
Bump Size φ100µm● φ90µm●
Bump Height Ball Mounted Solder Bump (80µm) Cu Pillar (Cu30µm+SnAg15µm)
Number of Pad 2116 pads/chip (46×46) 2116 pads/chip (46×46)
Number of Chip 228 chips/wafer 228 chips/wafer
Polyimide (Option) ○ ○
Evaluation KIT WALTS-KIT 01A200P-10
WALTS-KIT 01A200P-10_C400
WALTS-KIT FC200-0101JY
2×2
WALTS-KIT FC200-0102JY
2×2		 WALTS-KIT 01A200P-10
WALTS-KIT 01A200P-10_C400
WALTS-KIT FC200-0101JY
2×2
WALTS-KIT FC200-0102JY
2×2

WALTS-TEG FC200JY
【Glass-Type】

Specification Type-A Type-B
Wafer Size φ8 inch φ8 inch
Wafer Thickness 700±70µm 700±70µm
Chip Size 10.0mm■ 10.0mm■
Pad Pitch 200µm (Area) 200µm (Area)
Function - -
Bump Size φ100µm● φ90µm●
Bump Height Ball Mounted Solder Bump (80µm) Cu Pillar (Cu30µm+SnAg15µm)
Number of Pad 2116 pads/chip (46×46) 2116 pads/chip (46×46)
Number of Chip 228 chips/wafer 228 chips/wafer
Polyimide (Option) ○ ○
Evaluation KIT WALTS-KIT 01A200P-10
WALTS-KIT 01A200P-10_C400
WALTS-KIT FC200-0101JY
2×2
WALTS-KIT FC200-0102JY
2×2		 WALTS-KIT 01A200P-10
WALTS-KIT 01A200P-10_C400
WALTS-KIT FC200-0101JY
2×2
WALTS-KIT FC200-0102JY
2×2

WALTS-TEG FC200SCJY

Specification Type-A Type-B
Wafer Size φ8 inch φ8 inch
Wafer Thickness 725±25µm 725±25µm
Chip Size 5.02mm■ 5.02mm■
Pad Pitch 200µm (Area) 200µm (Area)
Function Daisy Chian Daisy Chian
Bump Size φ100µm● φ90µm●
Bump Height Ball Mounted Solder Bump (80µm) Cu Pillar (Cu30µm+SnAg15µm)
Number of Pad 484 pads/chip (22×22) 484 pads/chip (22×22)
Number of Chip 832 chips/wafer 832 chips/wafer
Polyimide (Option) ○ ○
Evaluation KIT WALTS-KIT FC200SC-0202JY
2×3
WALTS-KIT FC200SC-0202JY
3×3		 WALTS-KIT FC200SC-0202JY
2×3
WALTS-KIT FC200SC-0202JY
3×3

WALTS-TEG FBW200-0001JY WALTS-TEG FBW150-0001JY
WALTS-TEG FBW130-0001JY
WALTS-TEG FBW100-0001JY
WALTS-TEG FBW80-0001JY

Specification FBW200 FBW150 FBW130 FBW100 FBW80
Wafer Size φ8 inch φ8 inch φ8 inch φ8 inch φ8 inch
Wafer Thickness 725±25µm 725±25µm 725±25µm 725±25µm 725±25µm
Bump Pitch 200µm 150µm 130µm 100µm 80µm
Electrode Cu Pillar Cu Pillar Cu Pillar Cu Pillar Cu Pillar
Bump Size φ90µm φ75µm φ65µm φ50µm φ40µm
Bump Height (Max.60µm) (Max.60µm) (Max.60µm) (Max.60µm) (Max.50µm)

WLP TEG
(0.4mm pitch & 0.3mm pitch)

Specification 0.4mm pitch BGA 0.3mm pitch BGA
Wafer Size φ8 inch φ8 inch
Wafer Thickness 400±20µm 400±20µm
Chip Size 6.0mm■ 6.0mm■
BGA Pitch 400µm 300µm
Function Daisy Chain Daisy Chain
Electrode Ball Mounted Solder Bump Ball Mounted Solder Bump
Pad Size φ227µm● φ177µm●
Number of Pad 144 pins/chip 264 pins/chip
Number of Chip 712 chips/wafer 712 chips/wafer

WLP TEG (Free Size Cut TEG:
TEG0306,TEG0408,TEG0510)

Specification TEG0306 TEG0408 TEG0510
Wafer Size φ8 inch φ8 inch φ8 inch
Wafer Thickness 400µm 400µm 400µm
Cut Size (Min.) 600µm■ 800µm■ 1000µm■
Pad Pitch 300µm 400µm 500µm
Function Daisy Chain Daisy Chain Daisy Chain
Electrode Ball Mounted Solder Bump Ball Mounted Solder Bump Ball Mounted Solder Bump
Post Size 175µm 200µm 250µm
Number of Chip 79257 chips/wafer 44161 chips/wafer 28212 chips/wafer

WALTS-TEG MC03-0101JY

Specification WALTS-TEG MC03-0101JY
Wafer Size φ 8 inch
Wafer Thickness 725µm±25µm
Chip Size 0.3mm■ 0.4mm■ 0.5mm■
Pad Pitch 120µm 220µm 320µm
 Function Daisy Chain  Daisy Chain  Daisy Chain
Pad Metal Size X: 65µm
Y: 170µm		 X: 65µm
Y: 270µm		 X: 65µm
Y: 370µm
Bump Size 40µm
Bump Height Au(10µm)
Number of Chip 149,216
chips/wafer		 80,816
chips/wafer		 26,604
chips/wafer
 Evaluation KIT ---

WALTS-TEG ME0102JY
[for Migration Test]

Specification WALTS-TEG ME0102JY
Wafer Size φ 12 inch
Chip Size 20mm×25mm
Chip Name Chip_10_15 Chip_20_25 Chip_30_35
Metal Height 5.5µm
Facing Legth 3mm
Line/Space 15µm/10µm 15µm/15µm 15µm/20µm 15µm/25µm 15µm/30µm 15µm/35µm
Pitch 25µm 30µm 35µm 40µm 45µm 50µm
Number of Chip 34 chips/wafer 40 chips/wafer 34 chips/wafer

WALTS-TEG STAC-0101JY
[for Stress & Thermal Resistance Analysis]

Specification STAC-0101JY
Wafer Size φ 6 inch(Orientation Flat)
Wafer Thickness 550±25µm
Chip Size 3.0mm■
Pad Pitch 300µm
Function Stress Analysis by Piezoresistance
Thermal Analysis by Diode
Heat Generarion by Resistance
Electrode (Al Pad, Cu Pillar Bump, Solder Bump, Au Bump)
Number of Pad 32 pads/chip
Number of Chip 1596 chips/wafer
Polyimide (Option) ○
Option Back Side Metallization
Evaluation KIT WALTS-KIT STAC-0201JY

WALTS-TEG STACTEG-150FA-0101JY
WALTS-TEG STACTEG-300FA-0101JY

※Base Wafer:WALTS-TEG STAC-0101JY
Specification STACTEG-150FA STACTEG-300FA
Wafer Size φ 6 inch (Orientation Flat) φ 6 inch (Orientation Flat)
Wafer Thickness 550±25µm 550±25µm
Chip Size 3.0mm■ 3.0mm■
Pad Pitch 150µm 300µm
Function Stress Analysis by Piezoresistance
Thermal Analysis by Diode
Heat Generarion by Resistance		 Stress Analysis by Piezoresistance
Thermal Analysis by Diode
Heat Generarion by Resistance
Bump Size φ110µm● φ110µm●
Bump Height (Ni5µm+SnAg75µm） (Cu50µm+SnAg10µm)
Number of Pad 32 pads/chip 32 pads/chip
Number of Bump 32 bumps + 253 Dummy bumps 32 bumps + 64 Dummy bumps
Number of Chip 1596 chips/wafer 1596 chips/wafer
Polyimide (Option) ○ ○
Option Back Side Metallization Back Side Metallization
Evaluation KIT WALTS-KIT STAC-0201JY WALTS-KIT STAC-0201JY

WALTS-TEG HPW-0101JY

Specification HPW-0101JY
Wafer Size φ 8 inch(Notch)
Wafer Thickness 725±25µm
Chip Size 3.0mm■
Pad Pitch 300µm
Function Thermal Analysis by Diode
Heat Generarion by Resistance
Electrode (Al Pad, Cu Pillar Bump, Solder Bump, Au Bump)
Number of Pad 32 pads/chip
Number of Chip 2964 chips/wafer
Polyimide (Option) ○
 Maximum Output Max. 14.5W/Chip
Option Back Side Metallization

WALTS-TEG HPWTEG-150FA-0101JY
WALTS-TEG HPWTEG-300FA-0101JY

※Base Wafer：WALTS-TEG HPW-0101JY
Specification HPWTEG-150FA HPWTEG-300FA
Wafer Size φ 8 inch(Notch) φ 8 inch(Notch)
Wafer Thickness 725±25µm 725±25µm
Chip Size 3.0mm■ 3.0mm■
Pad Pitch 150µm 300µm
Function Thermal Analysis by Diode
Heat Generarion by Resistance		 Thermal Analysis by Diode
Heat Generarion by Resistance
Bump Size φ110µm● φ110µm●
Bump Height (Ni5µm+SnAg75µm) (Cu50µm+SnAg10µm)
Number of Pad 32 pads/chip 32 pads/chip
Number of Bump 32 bumps + 253 Dummy bumps 32 bumps + 64 Dummy bumps
Number of Chip 2964 chips/wafer 2964 chips/wafer
Option Back Side Metallization Back Side Metallization
Evaluation KIT -

WALTS-TEG HPW TSV-0101JY

※Base Wafer：WALTS-TEG
HPW-0101JY(SiN)
Specification HPW TSV-0101JY
Wafer Size φ 8 inch(Notch)
Wafer Thickness 100µm
Chip Size 3.0mm■
Top
Side		 Electrode Cu Pillar
Bump Pitch 300µm
Bump Size φ100µm●
Bump Height (Cu50µm+SnAg10µm)
Number of Bump 32 bumps + 64 Dummy bumps
TSV Via Size φ90µm●
Bottom
Side 		 Electrode Electroless Ni/Au Plating
Bump Pitch 300µm
Bump Size φ100µm●
Bump Height (8µm)
Number of Bump 32 bumps
Number of Chip 2964 chips/wafer
Evaluation KIT -

WALTS-TEG Thermal Chip

Specification Type-A Type-B Type-C
Wafer Size φ 5 inch φ 5 inch φ 5 inch
Wafer Thickness 625µm 625µm 625µm
Chip Size 3.2mm■ 1.6mm■ 0.8mm■
Pad Pitch any any any
Function Fever resistance Fever resistance Fever resistance
Bump Size - - -
Bump Height - - -
Number of Pad 20 pads/chip 12 pads/chip 8 pads/chip
Number of Chip 655 chips/wafer 974 chips/wafer 1272 chips/wafer
Polyimide (Option) ○ ○ ○
Evaluation KIT - - -

WALTS-TEG LKWB120
(Low-k TEG)
Specification LKWB120
Wafer Size φ 12 inch
Wafer Thickness 775±25µm
Chip Size 10.0mm■
Pad Pitch 120µm Staggered
Function Daisy Chian,Comb tooth Capacitor,Serpentine Resistor,Interlayer Capacitor,ViaChain
Bump Size -
Bump -Height -
Number of Pad 616 pads/chip
Number of Chip 636 chips/wafer
Polyimide (Option) ○
Evaluation KIT WALTS-KIT LKWB120

WALTS-TEG PWB0101JY

Specification PWB0101JY
Wafer Size φ 6 inch
Wafer Thickness 625±25µm
Chip Size 6.0mm■
Pad Pitch -
Function Bondability Check
Bump Size -
Bump Height -
Number of Pad -
Number of Chip -
Polyimide (Option) -
Evaluation KIT -

WALTS-TEG LCD30-0101JY

Specification LCD30-0101JY
Wafer Size φ 6 inch
Wafer Thickness 550±25µm
Chip Size 15.1 mm × 1.6 mm
Pad Pitch 30µm
Function Daisy Chian
Bump Size 20µm×100µm
Bump Height any
Number of Pad 726 pads/chip
Number of Chip 530 chips/wafer
Polyimide (Option) ○
Evaluation KIT WALTS-KIT LCD30_ITO
WALTS-KIT COF30
KIT Products
Product Ni/Au Cu Cu+OSP Core:E-679FG
(R)
SAC		 Core:E-700G
(R)
SAC		 Core:E-700G
(R)
NiPdAu+SAC		 Core:E-705G
(R)
NiPdAu+SAC		 Eutectic
Solder		 Electro
Sn
MB50-NCR
Standard/Map 		● - ● - - - - - -
MB50-CR
Standard/Map 		● ● ● ● - - - - ●
CC80 ● ● ● ● - - - - -
CC80-NCR ● ● ● - - - - - -
CC80-FR2 - - ● - - - - - -
CC80MARKⅡ - ● ● - - - - - -
FC150LC-1×1 ● ● ● - - - ● - ●
FC150-1×1 ● ● ● ● - - - - -
FC150-2×2 ● ● ● - ● ● ● - -
FC150R-2×2 ● ● ● - ● ● - - -
FC200-1×1 ● ● ● ● - - - - -
FC200-2×2 ● ● ● ● ● - - ● -
FC200SC-2×3 ● ● ● - ● - - - ●
FC200SC-3×3 ● ● ● - ● - - - ●
WLP300P/400P ● - - - - - - - -
EM0101JY - ● - - - - - - -
STAC ● ● ● - - - ● - -

WALTS-KIT MB50-0102JY_NCR
【Standard】

MB50-0101JY
Specification WALTS-KIT MB50-0102JY_NCR
*NCR: Non Center Solder Resist
Solder Resist Under Chip MB50-0101JY_NCR
Structure 1-2-1 Build up Substrate
Layer Structure Layer1 Signal Layer (no Via)
Layer2～Layer4 Mesh
Outline 17.0mm×17.0mm×t(0.8mm～1.0mm)
Core Material Core: E-679FGR
Build Layer: ABF-GX13
Solder Resist Material PSR4000 AUS-703
Lead Min L/S 20µm/30µm
Number of Lead 536
Pad Dimensions φ0.8µm (SR opening: φ0.65µm)
Number of Measurement Pad 32 pads
Electrode Electroless Ni/Au plating

WALTS-KIT MB50-0104JY_CR
【Standard】
WALTS-KIT MB50-0105JY_CR
【Standard】

Specification WALTS-KIT MB50-0104JY_CR
WALTS-KIT MB50-0105JY_CR
*CR: Center Solder Resist
Solder Resist Under Chip MB50-0101JY_CR
Structure 1-2-1 Build up Substrate
Layer Structure Layer1 Signal Layer (no Via)
Layer2～Layer4 Mesh
Outline 17.0mm×17.0mm×t(0.8mm～1.0mm)
Core Material WALTS-KIT MB50-0104JY_CR
　Core: E-679FGR
　Build Layer: ABF-SH9K
WALTS-KIT MB50-0105JY_CR
　Core: E-679FGR
　Build Layer: ABF-GX13
Solder Resist Material WALTS-KIT MB50-0104JY_CR
　PFR800AUS-410
WALTS-KIT MB50-0105JY_CR
　PSR4000 AUS-703
Lead Min L/S 20µm/30µm
Number of Lead 536
Pad Dimensions φ0.8µm (SR opening: φ0.65µm)
Number of Measurement Pad 32 pads
Electrode WALTS-KIT MB50-0104JY_CR
　Electroless Ni/Au plating

WALTS-KIT MB50-0105JY_CR
　Electroless Ni/Au plating
Cu + OSP
Cu (option: Solder Coat / Sn Coat)

　*OSP: Organic Solderability Preservatives

WALTS-KIT MB50-0102JY_NCR
【MAP】
Specification WALTS-KIT MB50-0102JY_NCR【MAP】
*NCR: Non Center Solder Resist
Solder Resist Under Chip MB50-0102JY_NCR
Structure 1-2-1 Build up Substrate
Layer Structure Layer1 Signal Layer (no Via)
Layer2～Layer4 Mesh
Outline 187.5mm×64.0mm×t(0.36mm)
Core Material Core: E-679FGBS
Build Layer: GX-13
Solder Resist Material PFR800 AUS-410
Lead Min L/S 20µm/30µm
Number of Lead 536
Pad Dimensions φ0.8µm (SR opening: φ0.65µm)
Number of Measurement Pad 32 pads
Electrode Electroless Ni/Au plating
Cu+OSP

WALTS-KIT MB50-0103JY_CR
【MAP】
WALTS-KIT MB50-0104JY_CR
【MAP】

Specification WALTS-KIT MB50-0103JY_CR【MAP】
WALTS-KIT MB50-0104JY_CR【MAP】
*CR: Center Solder Resist
Solder Resist Under Chip MB50-0103JY_CR, MB50-0104JY_CR
Structure 1-2-1 Build up Substrate
Layer Structure Layer1 Signal Layer (no Via)
Layer2～Layer4 Mesh
Outline 187.5mm×64.0mm×t(0.36mm)
Core Material Core: E-679FGBS
Build Layer: ABF-GX92
Solder Resist Material PSR4000 AUS-703
Lead Min L/S 20µm/30µm
Number of Lead 536
Pad Dimensions φ0.8µm (SR opening: φ0.65µm)
Number of Measurement Pad 32 pads
Electrode WALTS-KIT MB50-0103JY_CR【MAP】
Electroless Ni/Au plating
Cu + OSP
Cu (option: Solder Coat / Sn Coat)

WALTS-KIT MB50-0104JY_CR【MAP】
Electro Sn plating

　*OSP: Organic Solderability Preservatives

WALTS-TEG IP40-0101JY
*Silicon Interposer
Specification WALTS-TEG IP40-0101JY
*Silicon Interposer
[for WALTS-TEG CC40-0101JY]
Wafer Size φ 8 inch
Wafer Thickness 725±25µm
Chip Size 10.0 mm■
Pad Pitch (1) 40µm pitch Full area + Staggered (Model Ⅰ)
40µm pitch Staggered (Model Ⅱ)
(2)250µm pitch Periphera (Outer Pad)
Function Daisy Chian
Bump Short Check
Vernier
Breakdown Voltage Check between the Bumps
Bump Size -
Bump Height -
Number of Pad Model Ⅰ
(1) 29576 pads/chip
(2) 124 pads/chip (Outer Pad)
Model Ⅱ
(1) 1352 pads/chip
(2) 124 pads/chip (Outer Pad)
Number of Chip 228 chips/wafer
Polyimide (Option) -

WALTS-TEG IP40A-0101JY
*Silicon Interposer
Specification WALTS-TEG IP40A-0101JY
*Silicon Interposer
[for WALTS-TEG CC40-0101JY]
Wafer Size φ 8 inch
Wafer Thickness 725±25µm
Chip Size 10.0 mm■
Pad Pitch (1) 40µm pitch Full area + Staggered
(2)250µm pitch Periphera (Outer Pad)
Function Daisy Chian
Bump Short Check
Vernier
Breakdown Voltage Check between the Bumps
Bump Size -
Bump Height -
Number of Pad (1) 29576 pads/chip
(2) 124 pads/chip (Outer Pad)
Number of Chip 616 chips/wafer
Polyimide (Option) -

WALTS-TEG IP80-0101JY
*Silicon Interposer
Specification WALTS-TEG IP80-0101JY
*Silicon Interposer
[for WALTS-TEG CC80-0101JY]
Wafer Size φ 8 inch
Wafer Thickness 725±25µm
Chip Size 10.0 mm■
Pad Pitch (1) 80µm Staggered (Inner Pad)
(2) 300µm Full Area (Center Core)
(3) 250µm Periphera (Outer Pad)
Function Daisy Chian
Bump Size -
Bump Height -
Number of Pad (1) 648 pads/chip
(2) 400 pads/chip
(3) 124 pads/chip
Number of Chip 228 chips/wafer
Polyimide (Option) ○

WALTS-KIT CC80-0104JY
【MAP】(TypeA /TypeB)
Specification WALTS-KIT CC80-0104JY【MAP】
（Type A / Type B）
Structure 1-2-1 Build up Substrate
Layer Structure Layer 1, 2 Signal Layer(Via)
Layer 3, 4 Mesh
Outline Type A: 187.5mm×64.0mm×t(0.36mm)
Type B: 187.5mm×64.0mm×t(0.35mm)
Core Material Core: E-679FGBS
Build Layer: GX-92
Solder Resist Material Type A: PSR4000 AUS-703
Type B: PSR4000 AUS-320
Lead Min L/S 32µm/48uµm
Number of Lead 648
Pad Dimensions φ0.75mm (SR opening: φ0.67mm)
Number of Measurement Pad 72 pads
Electrode Electroless Ni/Au Plating
Cu
Cu + OSP
*OSP: Organic Solderability Preservatives

WALTS-KIT CC80-0104JY_NCR【MAP】
Specification WALTS-KIT CC80-0104JY_NCR【MAP】
Structure 1-2-1 Build up Substrate
Layer Structure Layer 1, 2 Signal Layer(Via)
Layer 3, 4 Mesh
Outline Type A: 187.5mm×64.0mm×t(0.36mm)
Type B: 187.5mm×64.0mm×t(0.35mm)
Core Material Core: E-679FGBS
Build Layer: GX-92
Solder Resist Material Type A: PSR4000 AUS-703
Type B: PSR4000 AUS-320
Lead Min L/S 32µm/48µm
Number of Lead 648
Pad Dimensions φ0.75mm (SR opening: φ0.67mm)
Number of Measurement Pad 72 pads
Electrode Electroless Ni/Au Plating
Cu
Cu + OSP
*OSP: Organic Solderability Preservatives

WALTS-KIT CC80-FR2
【MAP】ModelⅠ
Specification WALTS-KIT CC80-FR2【MAP】ModelⅠ
Structure 1-2-1 Build up Substrate
Layer Structure Layer 1, 2 Signal Layer(Via)
Layer 3, 4 Mesh
Outline 187.5mm×64.0mm×t(0.35mm)
Core Material Core: E-679FGBS
Build Layer: GX-92
Solder Resist Material PSR800 AUS-410
Solder Resist thickness above Cu metal 10µm
Lead Min L/S 32µm/48µm
Number of Lead Peripheral: 648
Full Area: 400
Pad Dimensions φ0.75mm (SR opening: φ0.67mm)
Number of Measurement Pad 72 pads
Electrode Cu + OSP
*OSP: Organic Solderability Preservatives

WALTS-KIT CC80MarkⅡ-0201JY
【MAP】
Specification WALTS-KIT CC80MarkⅡ-0201JY【MAP】
Structure 1-2-1 Build up Substrate
Layer Structure Layer 1, 2 Signal Layer(Via)
Layer 3, 4 Mesh
Outline 230.0mm×62.5mm×t(0.36mm)
Core Material Core:HL832NSFLC (0.2mmt)
Build Layer: ABF-GX13
Solder Resist Material PSR800 AUS-410
Lead Min L/S 16µm/24µm
Number of Electrode 1660 (Peripheral)
2916 (Center Core)
Pad Dimensions [Square]
0.70mm×0.48mm
(SR opening: 0.62mm×0.40mm)
[Dome]
　 0.71mm×0.48mm
(SR opening: 0.63mm×0.40mm)
Number of Measurement Pad [Square]68 pads
[Dome]8 pads
Electrode Cu
Cu + OSP
*OSP: Organic Solderability Preservatives

WALTS-KIT FC150LC-0302JY
Specification WALTS-KIT FC150LC-0302JY
Layer Structure 2-2-2
Outline 55.0mm×55.0mm×t(0.634mm)
Core Material Core: E-705G
Solder Resist PSR4000 AUS-703
Land Size φ0.13mm
Number of Lead 25921 (161×161)
SR Opening φ90µm
Number of Measurement Pad 240 pads
Daisy Pattern (1) Daisy Chain Pattern A: 196 Pads(14×14)
(2) Daisy Chain Pattern B: 72 Pads(12×6)
(3) Daisy Chain Pattern C: 169 Pads(13×13)
(4) Daisy Pattern D: 12 Pads(4×3)
Electrode Cu
Cu+OSP
Electroless Plating: Ni/Pd/Au
Electroless Plating: Ni/Pd/Au+SnAgCu
Electro Plating: Sn etc.

WALTS-KIT 01A150P-10-2 1×1

Specification WALTS-KIT 01A150P-10-2　1×1
Structure Rigid Substrate (Both)
Outline 30.0mm×30.0mm×t(0.96mm)
Core Material Core: E-679FGR
Solder Resist PSR4000 AUS-703
Land Size φ0.12mm
Number of Lead 3721 (61×61)
SR Opening φ80uµm
Number of Measurement Pad 24 pads
Daisy Chain Center Area 16×15 Matrix
Corner Area 15×15 four Matrix
Electrode Electroless Ni/Au Plating
Cu + OSP (option Solder Coat)
*OSP: Organic Solderability Preservatives

WALTS-KIT FC150-0104JY 2×2
(E-700G)

Specification WALTS-KIT FC150-0104JY　2×2（E-700G）
Structure Rigid Substrate (Both)
Outline 35.0mm×35.0mm×t(0.96mm)
Core Material Core: E-700G
Solder Resist PSR4000 AUS-703
Land Size φ0.12mm
Number of Lead 14884 (3721/chip×4)
SR Opening φ80µm
Number of Measurement Pad 32 pads
Daisy Chain Center Area 30×30 Matrix
Corner Area 15×15 four Matrix
Electrode Electroless Ni/Au Plating
NiPdAu+SAC
Cu + OSP (option Solder Coat)
*OSP: Organic Solderability Preservatives

WALTS-KIT FC150-0103JY2×2
(E-705G)

Specification WALTS-KIT FC150-0103JY　2×2（E-705G）
Structure Rigid Substrate (Both)
Outline 35.0mm×35.0mm×t(0.36mm)
Core Material Core: E-705G
Solder Resist PSR4000 AUS-703
Land Size φ0.12mm
Number of Lead 14884 (3721/chip×4)
SR Opening φ80µm
Number of Measurement Pad 32 pads
Daisy Chain Center Area 30×30 Matrix
Corner Area 15×15 four Matrix
Electrode NiPdAu+SAC

WALTS-KIT FC150R-0102JY 2×2

Specification WALTS-KIT FC150R-0102JY 2×2
Structure Rigid Substrate (Both)
Outline 35.0mm×35.0mm×t(0.96mm)
Core Material Core: E-700G
Solder Resist PSR4000 AUS-703
Land Size φ0.12mm
Number of Lead 14884 (3721/chip×4)
SR Opening φ80µm
Number of Measurement Pad 32 pads
Daisy Chain Center Area 30×30 Matrix
Corner Area 15×15 four Matrix
Electrode Cu
Cu+OSP
Electroless Plating:
Ni/Pd/Au Plating
NiPdAu+SAC
Cu + SAC
*OSP: Organic Solderability Preservatives

WALTS-KIT 01A200P-10 1×1

Specification WALTS-KIT 01A200P-10 1×1
Structure Rigid Substrate (Both)
Outline 35.0mm×35.0mm×t(0.86mm)
Core Material Core: E-679FGR
Solder Resist PSR4000 AUS-703
Land Size φ0.14mm
Number of Lead 2116 (46×46)
Vehicle 10mm×10mm 200um pitch area
SR Opening φ95µm
Number of Measurement Pad 24 pads
Daisy Chain Center Area 12×12 Matrix
Corner Area 12×11 four Matrix
Electrode Electroless Ni/Au Plating
Cu
Cu + OSP (option Solder Coat)
*OSP: Organic Solderability Preservatives

WALTS-KIT 01A200P-10_C400 1×1

Specification WALTS-KIT 01A200P-10_C400 1×1
Structure Rigid Substrate (Both)
Outline 35.0mm×35.0mm×t(0.46mm)
Core Material Core: E-679FGR
Solder Resist PSR4000 AUS-703
Land Size φ0.14mm
Number of Lead 2116 (46×46)
Vehicle 10mm×10mm 200µm pitch area
SR Opening φ95µm
Number of Measurement Pad 24 pads
Daisy Chain Center Area 12×12 Matrix
Corner Area 12×11 four Matrix
Electrode SnAgCu

WALTS-KIT FC200-0101JY 2×2
WALTS-KIT FC200-0102JY 2×2

Specification WALTS-KIT FC200-0101JY 2×2
WALTS-KIT FC200-0102JY 2×2
Structure Rigid Substrate (Both)
Outline 35.0mm×35.0mm×t(0.87mm)
Core Material WALTS-KIT FC200-0101JY　2×2
Core: E-679FGR
WALTS-KIT FC200-0102JY　2×2
Core: E-700GR
Solder Resist PSR4000 AUS-703
Land Size φ0.14mm
Number of Lead 8464 (2116/chip×4)
Vehicle 20mm×20mm 200µm pitch area
SR Opening φ95µm
Number of Measurement Pad 32 pads
Daisy Chain Center Area 20×18 Matrix
Corner Area 12×11 four Matrix
Electrode Electroless Ni/Au Plating
Cu + OSP (option Solder Coat)
*OSP: Organic Solderability Preservatives

WALTS-KIT FC200SC-0202JY 2×3

Specification WALTS-KIT FC200-0101JY 2×2
Structure Rigid Substrate (Both)
Outline 35.0mm×35.0mm×t(1.05mm)
Core Material Core: E-700G
Solder Resist PSR4000 AUS-703
Land Size φ0.14mm
Number of Lead 2904 (484/chip×6)
Vehicle 10.04mm×15.06mm 200µm pitch area
SR Opening φ95µm
Number of Measurement Pad 64 pads
Daisy Chain Center Area 8×10 two Matrix
Corner Area 12×11 four Matrix
Out Side Area 7×12　two Matrix
Electrode Electroless Sn Plating
Cu + OSP (option Solder Coat)
*OSP: Organic Solderability Preservatives

WALTS-KIT FC200SC-0202JY 3×3

Specification WALTS-KIT FC200-0101JY 3×3
Structure Rigid Substrate (Both)
Outline 35.0mm×35.0mm×t(1.05mm)
Core Material Core: E-700G
Solder Resist PSR4000 AUS-703
Land Size φ0.14mm
Number of Lead 2904 (484/chip×6)
Vehicle 10.04mm×15.06mm 200µm pitch area
SR Opening φ95µm
Number of Measurement Pad 64 pads
Daisy Chain Center Area 8×10 two Matrix
Corner Area 12×11 four Matrix
Out Side Area 7×12　two Matrix
Electrode Electroless Sn Plating
Cu + OSP (option Solder Coat)
*OSP: Organic Solderability Preservatives

WALTS-KIT WLP300P/400P

Specification WALTS-KIT WLP300P/400P
* for WLP TEG (0.4mm pitch & 0.3mm pitch)
Structure 1-0-1 Build up Substrate
Layer Structure Layer1, Layer2
Outline 30.0mm×30.0mm×t(0.93mm)
Core Material Core: E-679FGR
Build Layer: ABF-GX13
Solder Resist PSR4000 AUS-703
Number of Lead WLP300P: 264
WLP400P: 144
Pad Dimensions 2.4mm×4.0mm
(SR opening: 2.2mm×3.8mm)
Number of Measurement Pad 15 pads
Electrode Electroless Ni/Au plating

WALTS-KIT EM0101JY
(for Electro Migration Analysis)

Specification WALTS-KIT EM0101JY
Outline 250.0mm×90.0mm×t(1.53mm)
Core Material Core: E-679GT
Solder Resist PSR4000 AUS-703
Lead Min L/S ①L/S=40µm/15µm
②L/S=40µm/20µm
③L/S=40µm/30µm
④L/S=40µm/40µm
⑤L/S=40µm/50µm

WALTS-KIT STAC-0201JY

Specification WALTS-KIT STAC-0201JY
Structure Rigid Substrate (Both)
Outline 45.0mm×45.0mm×t(0.55mm)
Core Material Core: E-705G
Solder Resist PSR4000 AUS-703
FCA Area Pad Pitch: 300µm
SR Opening: φ110µm
・Top Side: for 1×1 chip, 3×3 chip
・Bottom Side: for 2×2 chip, 4×4chip
Electrode Cu
Cu + OSP
Ni/Au
Ni/Pd/Au+SnAgCu
*OSP: Organic Solderability Preservatives

WALTS-COF TEG-KIT001

Specification WALTS-COF TEG-KIT001
Core Material S'PERFLEC-S Grade (KAPTON)
S'PERFLEC-US Grade (ESPANEX)
Composition Polyimide: KAPTON (38µm), ESPANEX(34µm)
Cu: Sputtered 8µm
Solder Resist -
Plating Material Sn (0.2±0.05)
Lead Pitch ①12.5µm/12.5µm
②15.0µm/10.0µm
③10.0µm/15.0µm
④10.0µm/10.0µm
Pad Dimensions 3.0mm×1.5mm

WALTS-KIT LCD30-0101JY

Specification WALTS-KIT LCD30-0101JY
Material Non Alkali Glass
Outline 52.55mm×24.00mm×t(0.70mm)
Wire Material ITO 1,500Å (option IZO)
Function Daisy Chain
Breakdown Voltage Check between the Bumps
Conformed Chip WALTS-TEG LCD30-0101JY

WALTS-KIT LCD30-0102JY

Specification WALTS-KIT LCD30-0102JY
Material Non Alkali Glass
Outline 52.55mm×24.00mm×t(0.70mm)
Wire Material Al-Nd (150nm)
Function Daisy Chain
Breakdown Voltage Check between the Bumps
Leed Protection Film SiN
Conformed Chip WALTS-TEG LCD30-0101JY

WALTS-KIT COF30-0101JY

Specification WALTS-KIT COF30-0101JY
State Reel
Product Name S'PERFLEX
Plating Material Au

SIPOS-TEG

SIPOS-TEG SB04【Periphral & Staggered】
Specification SB0401
 SB0402
 SB0403
 SB0404
Wafer Size φ 8 inch
Wafer Thickness 725um±25µm
Chip Size 3.0mm■ 3.0mm■ 3.0mm■ 3.0mm■
Pad Pitch 60um Periphral 80um Periphral 100um Periphral 300um Staggered
Number of Pad 168pad 120pad 96pad 256pad
Pad Size 46µm■ 60µm■ 80µm■ 32µm■
Pad Opening Size 40µm■ 50µm■ 70µm■ 26µm■
Scribe Width 100µm 100µm 100µm 100µm
Comb Dimension L/S = 7µm/7µm L/S = 10µm/10µm L/S = 12µm/12µm L/S = 5µm/5µm
Number of Comb 70 (35×2) 50 (25×2) 40 (20×2) 100 (50×2)
Interlayer
Dielectric Patter		 φ1.0mm (Octagon) φ1.0mm (Octagon) φ1.0mm (Octagon) φ1.0mm (Octagon)

SIPOS-TEG SB05/06【Full Area】
Specification SB0501 SB0502
 SB0601
 SB0602
Wafer Size φ 8 inch
Wafer Thickness 725um±25µm
Chip Size 3.0mm■ 3.0mm■ 3.0mm■ 3.0mm■
Pad Pitch 150µm 300µm 150µm 300µm
Number of Pad 324pad 64pad 68pad 32pad
Daisy Chain Pad 180pad 32pad - -
Pad Size 100µm■ 190µm■ 100µm■ 190um■
Pad Opening φ90µm φ180µm φ100µm φ180µm
Scribe Width 100µm 100um 100µm 100µm
Comb Dimension - - L/S = 18µm/18µm L/S = 36µm/36µm
Number of Comb - - 28 (14×2) 14 (7×2)
Interlayer
Dielectric Patter		 - - φ1.0mm (Octagon) φ1.0mm (Octagon)

SIPOS-TEG TEST-9【TSV】
Specification A
 B
 C
 D
Wafer Size φ 8 inch
Wafer Thickness 725um±25µm
Chip Size 20.0mm■ 20.0mm■ 20.0mm■ 20.0mm■
TSV Hole Diameter 20µm●　20µm■ 30µm●　30µm■ 50µm●　50µm■ 80µm●　80µm■
TSV Pitch (X) 80µm 120µm 150µm 200µm
TSV Pitch (Y) 40µm, 50µm, 60µm 60µm, 80µm, 100µm 80µm, 100µm, 120µm 120µm, 150µm, 220µm